研究员-凯发k8官网登录vip

  余学峰，男，中科院新疆理化技术研究所研究员，博士生导师。 从1986年起一直从事半导体辐射物理研究工作，主持完成了国家“863”、“973”、 “科技支撑”及国家科学自然基金等多项重要课题的研究任务，在星用微电子器件辐射效应、损伤机理及抗辐射加固工艺研究等方面，取得多项重要研究成果。 

  余学峰曾获得第六届中国优秀科技青年奖、中科院科技进步一等奖，新疆维吾尔自治区科技进步一、二、三等奖，享受国务院颁发的政府特殊津贴，发表论文100余篇。 

主要研究领域： 

1. 电子器件辐射效应与损伤机理研究； 

2. 星用电子器件可靠性保障技术和评估方法研究； 

代表性文章 

(1) xiaowen liang; jiangwei cui; qiwen zheng; jinghao zhao; xuefeng yu*; jing sun; dan zhang; qi guo ; impact of heavy-ion irradiation on gate oxide reliability of silicon carbide power mosfet, radiation effects and defects in solids, 2021, 12(176) 

(2) haonan feng; sheng yang; xiaowen liang; dan zhang; xiaojuan pu; xu cui; haiyang wang; jing sun;  xuefeng yu*; qi guo ; radiation effects and mechanisms on switching characteristics of silicon carbide power mosfets, journal of nanoelectronics and optoelectronics, 2021, 16(9): 1423-1429 

(3) yang sheng; liang xiaowen; cui jiangwei; zheng qiwen; sun jing; liu mohan; zhang dan; feng haonan; yu xuefeng*; xiang chuanfeng; li yudong; guo qi ; impact of switching frequencies on the tid response of sic power mosfets, journal of semiconductors, 2021, 42(8): 1-4 

(4) xiaowen liang; jiangwei cui; qiwen zheng; jinghao zhao; xuefeng yu*; jing sun; dan zhang; qi guo ; study of the influence of gamma irradiation on long-term reliability of sic mosfet, radiation effects and defects in solids, 2020, 2020(1) 

(5) qiwen zheng; jiangwei cui; xuefeng yu; wu lu; chengfa he; teng ma; jinghao zhao; diyuan ren; qi guo ; read static noise margin decrease of 65-nm 6-t sram cell induced by total ionizing dose, ieee transactions on nuclear science, 2018, 65(2): 691-697 

(6) feng haonan, yang sheng, liang xiaowen, zhang dan, pu xiaojuan, sun jing, wei ying, cui jiangwei, li yudong, yu xuefeng*, guo qi. static and dynamic radiation damage of silicon carbide vdmos and their comparison[j]. atomic energy science and technology, 2022, 56(4): 767-774. 

(7) liang xiaowen, feng haonan, pu xiaojuan, cui jiangwei, sun jing, wei ying, zhang dan, yu xuefeng, guo qi.study of heavy ion induced single event gate rupture effect in sic mosfets [j]. japanese journal of applied physics, 2022, 61(8): 084002. 

(8) ma, teng ; zheng, qi-wen; cui, jiang-wei; zhou, hang; su, dan-dan; yu, xue-feng * ; guo, qi  an increase in tddb lifetime of partially depleted soi devices induced by proton irradiation， chinese physics letters 2017.6 34(7) 

(9) zheng qi-wen; cui jiang-wei ; zhou hang; yu de-zhao; yu xue-feng(*) ; lu wu; guo qi; ren di-yuan， analysis of functional failure mode of commercial deep  sub-micron sram induced by total dose irradiation， chinese physics b 2015.10    24 (10) 

(10) zheng, qiwen; cui, jiangwei; liu, mengxin; su, dandan; zhou, hang; ma, teng; yu, xuefeng;lu, wu; guo, qi; zhao, fazhan ; direct measurement and analysis of total ionizing dose effect on130 nm pd soi sram cell static noise margin, chinese physics b, 2017, 26(9) 

研究领域： 

微电子器件辐射物理与可靠性物理