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2019/11-至今 中国科学院新疆理化技术研究所，研究员 

2012/11-2019/10 中国科学院新疆理化技术研究所，副研究员 

2012/07-2012/10中国科学院新疆理化技术研究所，助理研究员 

2007/09-2012.06，中国科学院大学，微电子学与固体电子学专业，博士学位 

2002/09-2006/07，西安理工大学，电子科学与技术专业，学士学位 

主要研究领域及成就： 

主要从事cmos器件辐射效应研究，研究成果已应用于本领域主要器件研制单位、工程单位、科研单位，为cmos器件设计及评估提供了支撑。主持完成了国家自然科学基金等科研项目10余项；公开发表数据库收录论文80余篇，其中sci/ei收录60余篇；授权发明专利2项。

主要荣誉： 

2021年度新疆维吾尔自治区科技进步一等奖（第一完成人） 

2015年度新疆维吾尔自治区科技进步一等奖（第九完成人） 

第八届中国电子学会优秀科技工作者 

代表性文章： 

[1] jiangwei cui*, qiwen zheng*, yudong li, et.al, impact of high tid irradiation on stability of 65 nm sram cells. ieee transactions on nuclear science, 2022, 69(5): 1044-1050, sci 

[2] qiwen zheng*, jiangwei cui*, xuefeng yu, yudong li, wu lu, chengfa he, qi guo. measurement and evaluation of the within-wafer tid response variability on box layer of soi technology. ieee transactions on nuclear science, 2021, 68(10): 2516-2523, sci 

[3] qiwen zheng*, jiangwei cui*, xuefeng yu, yudong li, wu lu, chengfa he, qi guo. impact of tid on within-wafer variability of radiation-hardened soi wafers. ieee transactions on nuclear science, 2021, 68(7): 1423-1429, sci 

[4] xu cui, jiangwei cui*, qiwen zheng*, ying wei, yudong li, qi guo. bias dependence of total ionizing dose effects in 22 nm bulk nfinfets. radiation effects and defects in solids, 2022, 177(3-4), on line, sci 

[5] jiangwei cui, xuefeng yu, diyuan ren, jian lu, the influence of channel size on total dose irradiation and hot-carrier effects of sub-micro nmosfet, acta phys. sin., 2012, 61(2): 026102, sci 

[6] jiangwei cui, xuefeng yu, diyuan ren, relationship between silicon-on-insulator kink and radiation effects, international journal of modern physics e, 2011, 20(6): 1409-1417, sci 

[7] jiangwei cui, qiwen zheng, bingxu ning, xuefeng yu, kai zhao, ying wei, wu lu, chengfa he, diyuan ren, fang yu, liewei xu, qi guo, hot-carrier effect on tid irradiated short-channel uttb fd-soi n-mosfets, 2018, 2018 ieee radiation effects data workshop (redw), ei 

[8] baoshun wang, jiangwei cui*, qi guo, qiwen zheng, ying wei, shanxue xi, the influence of total ionizing dose on the hot carrier injection of 22 nm bulk nfinfet, journal of semiconductors, 2020, 41(12): 122102, ei 

[9] jiangwei cui, qiwen zheng, xuefeng yu, zhongchao cong, hang zhou, qi guo, lin wen, ying wei and diyuan ren, hot-carrier effects on irradiated deep submicron nmosfet, journal of semiconductors, 2014, 35(07): 56-59, ei 

[10] jiangwei cui, yaoguo xue, xuefeng yu, diyuan ren, jian lu, xingyao zhang, total dose irradiation and hot-carrier effects of sub-micro nmosfets, journal of semiconductors, 2012, 33(1): 014006, ei 

代表性专利： 

[1] 崔江维，郑齐文，魏莹，孙静，余学峰，郭旗，陆妩，何承发，任迪远，一种总剂量辐照对pmosfet负偏压温度不稳定性影响的试验方法，zl201711329107.0 

[2] 郑齐文，崔江维，李小龙，魏莹，余学峰，李豫东，郭旗；一种电路级总剂量辐射效应仿真方法，zl 202011125626.7 

[3] 郑齐文，崔江维，李小龙，魏莹，余学峰，李豫东，郭旗，一种总剂量效应与工艺波动耦合的电路仿真方法，zl202011125363.x 

研究领域： 

微电子学与固体电子学