研究员-凯发k8官网登录vip

主要研究领域及成就： 

主要从事先进cmos工艺辐射损伤机理、模型及加固原理研究。在ieee tns，nsrce，radecs等半导体器件辐射效应著名期刊及国际会议发表论文56篇。主持国家自然科学基金面上、青年项目、工业基础软件研发课题等国家级科研项目。 

主要荣誉：

2021年度新疆维吾尔自治区科技进步一等奖（第三完成人）

2020年度新疆自然科学基金杰出青年基金

2019年度中国科学院青年创新促进会

代表性文章： 

[1] zheng qiwen, cui jiangwei, yu xuefeng, li yudong, lu wu, he chengfa, and guo qi, “impact of tid on within-wafer variability of radiation-hardened soi wafers”, ieee transactions on nuclear science, 68(7): 1423-1429, 2021. 

[2] zheng qiwen, cui jiangwei, yu xuefeng, li yudong, lu wu, he chengfa, and guo qi, “measurement and evaluation of the within-wafer tid response variability on box layer of soi technology”, ieee transactions on nuclear science, 68(10): 2516-2523, 2021. 

[3] zheng qiwen, cui jiangwei, xu liewei, ning bingxu, zhao kai, shen mingjie, yu xuefeng, lu wu, he chengfa, ren diyuan and guo qi, “total ionizing dose responses of forward body bias ultra-thin body and buried oxide fd-soi transistors”, ieee transactions on nuclear science, 66(4): 702-709, 2019. 

[4] zheng qiwen, cui jiangwei, lu wu, guo hongxia, liu jie, yu xuefeng, wang liang, liu jiaqi, he chengfa, ren diyuan, yue suge, zhao yuanfu and guo qi, “total ionizing dose influence on the single-event multiple-cell upsets in 65-nm 6-t sram”, ieee transactions on nuclear science, 66(6): 892-898, 2019. 

[5] zheng qiwen, cui jiangwei, yu xuefeng, lu wu, he chengfa, ma teng, zhao jinghao, ren diyuan and guo qi, “read static noise margin decrease of 65-nm 6-t sram cell induced by total ionizing dose”, ieee transactions on nuclear science, 65(2): 691-697, 2018. 

[6] zheng qiwen, cui jiangwei, lu wu, guo hongxia, liu jie, yu xuefeng, wei ying, wang liang, liu jiaqi, he chengfa and guo qi, “the increased single-event upset sensitivity of 65-nm dice sram induced by total ionizing dose”, ieee transactions on nuclear science, 65(8): 1920-1927, 2018. 

[7] zheng qiwen, cui jiangwei, liu mengxin, zhou hang, liu mohan, wei ying, su dandan, ma teng, lu wu, yu xuefeng, guo qi and he chengfa, “total ionizing dose influence on the single-event upset sensitivity of 130-nm pd soi srams”, ieee transactions on nuclear science, 64(7): 1897-1904, 2017. 

[8] xi shanxue, zheng qiwen, lu wu, cui jiangwei, wei ying and guo qi, “modeling of tid-induced leakage current in ultra-deep submicron soi nmosfets”, microelectronics journal, 102: 104829-1-8, 2020. 

[9] xi shanxue, zheng qiwen, wu lu, cui jiangwei, wei ying, wang baoshun and guo qi, “the influence of channel width on total ionizing dose responses of the 130？nm h-gate partially depleted soi nmosfets”, radiation effects and defects in solids, 175(5-6):1-8, 2020. 

[10] zheng qiwen, cui jiangwei, wei ying, yu xuefeng, lu wu, ren diyuan and guo qi, “bias dependence of radiation-induced narrow-width channel e？ects in 65 nm nmosfets”, chin.phys.lett, 35(4): 046102-1-4, 2018. 

代表性专利： 

1.授权发明专利，崔江维，郑齐文，魏莹，孙静，余学峰，郭旗，陆妩，何承发，任迪远，一种总剂量辐照对pmosfet负偏压温度不稳定性影响的试验方法，zl201711329107.0 

2.授权发明专利，郑齐文，崔江维，李小龙，魏莹，余学峰，李豫东，郭旗，一种电路级总剂量辐射效应仿真方法，zl202011125626.7

3.授权发明专利，郑齐文，崔江维，李小龙，魏莹，余学峰，李豫东，郭旗，一种总剂量效应与工艺波动耦合的电路仿真方法,zl202011125363.x

研究领域： 

微电子学与固体电子学